Mathematical assessment of the thermal band gap variation of semiconductors

被引：9

作者：

Bhowmick, Mithun ^{[1
]}

Xi, Haowen ^{[2
]}

Androulidaki, Maria ^{[3
]}

Ullrich, Bruno ^{[4
]}

机构：

[1] Univ Illinois, Sch Chem Sci, Urbana, IL 61801 USA

[2] Bowling Green State Univ, Dept Phys & Astron, Bowling Green, OH 43403 USA

[3] Fdn Res & Technol Hellas, GR-71110 Iraklion, Greece

[4] Ullrich Photon LLC, Manistique, MI 49854 USA

来源：

PHYSICA SCRIPTA | 2019年 / 94卷 / 08期

关键词：

semiconductor; thermal properties; entropy; Fan's theory; Varshni equation; band gap temperature dependence; curve discussion; TEMPERATURE-DEPENDENCE; ENERGY-GAP; GAAS; ZNSE;

D O I：

10.1088/1402-4896/ab0230

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The thermal band gap variation of ZnS, GaAs, GaP, and ZnSe is mathematically discussed by means of curve discussion. We investigated the most used expressions, i.e. the formulas of Varshni (1967 Physica 34 148) and Fan (1951 Phys. Rev. 82 900). The first and specifically the second derivative of both expressions reveal that Fan's theory describes the physics behind the thermal affairs, while Varshni's formula does not. In fact, the second derivative of Fan's expression pinpoints the temperature at which the maximum of the formation entropy of electron hole pairs takes place, representing the semiconductor's refractoriness. The work shows that curve discussion verifies whether a mathematical expression describes indeed the physics behind the phenomenon investigated or rather represents simply fitting efficiency.

引用

页数：5

共 19 条

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