Spin injection in a ferromagnet/resonant tunneling diode heterostructure

被引:0
作者
Bao, Jin [1 ]
Wan, Fang [1 ]
Wang, Yu [1 ]
Xu, Xiaoguang [1 ]
Jiang, Yong [1 ]
机构
[1] Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China
来源
JOURNAL OF UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING | 2008年 / 15卷 / 05期
基金
中国国家自然科学基金;
关键词
spin injection; resonant tunneling diode; heterostructure; spin polarization;
D O I
10.1016/S1005-8850(08)60119-X
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The spin transport property of a ferromagnet (FM)/insulator (I)/resonant tunneling diode (RTD) heterostructure was studied. The transmission coefficient and spin polarization in a multilayered heterostructure was calculated by a Schrodinger wave equation. An Airy function formalism approach was used to solve this equation. Based on the transfer matrix approach, the transmittivity of the structure was determined as a function of the Feimi energy and other parameters. The result shows that the spin polarization induced by the structure oscillates with the increasing Fermi energy of the FM layer. While the thickness of the RTD is reduced, the resonant peaks become broad. In the heterostructure, the spin polarization reaches as high as 40% and can be easily controlled by the external bias voltage. (C) 2008 University of Science and Technology Beijing. All rights reserved.
引用
收藏
页码:638 / 643
页数:6
相关论文
共 13 条
[1]   Improved Airy function formalism for study of resonant tunneling in multibarrier semiconductor heterostructures [J].
Allen, SS ;
Richardson, SL .
JOURNAL OF APPLIED PHYSICS, 1996, 79 (02) :886-894
[2]   Magnetoresistance and spin electronics [J].
Barthélémy, A ;
Fert, A ;
Contour, JP ;
Bowen, M ;
Cros, V ;
De Teresa, JM ;
Hamzic, A ;
Faini, JC ;
George, JM ;
Grollier, J ;
Montaigne, F ;
Pailloux, F ;
Petroff, F ;
Vouille, C .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2002, 242 :68-76
[3]   RESONANT-TUNNELING THROUGH ERAS SEMIMETAL QUANTUM-WELLS [J].
BREHMER, DE ;
ZHANG, K ;
SCHWARZ, CJ ;
CHAU, SP ;
ALLEN, SJ ;
IBBETSON, JP ;
ZHANG, JP ;
PALMSTROM, CJ ;
WILKENS, B .
APPLIED PHYSICS LETTERS, 1995, 67 (09) :1268-1270
[4]   RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J].
CHANG, LL ;
ESAKI, L ;
TSU, R .
APPLIED PHYSICS LETTERS, 1974, 24 (12) :593-595
[5]   Observation of spin injection at a ferromagnet-semiconductor interface [J].
Hammar, PR ;
Bennett, BR ;
Yang, MJ ;
Johnson, M .
PHYSICAL REVIEW LETTERS, 1999, 83 (01) :203-206
[6]  
HEERSCHE HB, 2000, PHYS REV B, V64
[7]   Spin injection across a heterojunction: A ballistic picture [J].
Hu, CM ;
Matsuyama, T .
PHYSICAL REVIEW LETTERS, 2001, 87 (06) :66803-1
[8]   Electron spin polarization in resonant interband tunneling devices [J].
Petukhov, AG ;
Demchenko, DO ;
Chantis, AN .
PHYSICAL REVIEW B, 2003, 68 (12)
[9]   Interference ferromagnet/semiconductor/ferromagnet spin field-effect transistor -: art. no. 125314 [J].
Schäpers, T ;
Nitta, J ;
Heersche, HB ;
Takayanagi, H .
PHYSICAL REVIEW B, 2001, 64 (12)
[10]   Fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semiconductor [J].
Schmidt, G ;
Ferrand, D ;
Molenkamp, LW ;
Filip, AT ;
van Wees, BJ .
PHYSICAL REVIEW B, 2000, 62 (08) :R4790-R4793