Comparison of Synthetic Antiferromagnets and Hard Ferromagnets as Reference Layer in Magnetic Tunnel Junctions With Perpendicular Magnetic Anisotropy

被引：78
作者：
Bandiera, S. [1 ]
Sousa, R. C. [1 ]
Dahmane, Y. [1 ]
Ducruet, C. [2 ]
Portemont, C. [2 ]
Baltz, V. [1 ]
Auffret, S. [1 ]
Prejbeanu, I. L. [1 ]
Dieny, B. [1 ]
机构：
[1] CEA Grenoble, CNRS, UJF, Grenoble INPI,INAC,SPINTEC,UMR 8191, F-38054 Grenoble, France
[2] Crocus Technol, F-38025 Grenoble, France
来源：
IEEE MAGNETICS LETTERS | 2010年 / 1卷
关键词：
Spin electronics; Co/Pt multilayers; dipolar interaction; magnetic tunnel junction (MTJ); magnetoresistive random access memory (MRAM); perpendicular magnetic anisotropy (PMA); tunneling magnetoresistance;
D O I：
10.1109/LMAG.2010.2052238
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In magnetic tunnel junctions (MTJ), synthetic antiferromagnets (SAF) are usually used as reference layer to minimize dipolar interactions induced between this layer and the free layer (FL). We show here that the use of SAF allows us to reduce the asymmetry of the FL reversal due to stray fields in nanosized MTJs with perpendicular magnetic anisotropy.
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