CO oxidation on rough Au thin films grown on Si wafer

被引：8

作者：

Seo, H. O. ^{[1
]}

Jeong, S. H. ^{[1
]}

Lee, H. J. ^{[1
]}

Jee, H. -G. ^{[1
]}

Boo, J. -H. ^{[1
]}

Lim, D. C. ^{[2
]}

Kim, Y. D. ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Dept Chem, Suwon 440746, South Korea

[2] Korea Inst Mat Sci, Dept Surface Technol, Chang Won 641010, South Korea

来源：

APPLIED CATALYSIS A-GENERAL | 2008年 / 347卷 / 01期

关键词：

Au; CO oxidation; nanostructure;

D O I：

10.1016/j.apcata.2008.06.010

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The CO oxidation reactivity of rough Au thin films containing similar to 5% W was investigated. At room temperature, no CO oxidation could be detected under our experimental conditions, whereas conversion of CO to CO2 was observed at 160 degrees C. At higher temperatures, the initial reactivity increased. However, with increasing reaction time, it was evident that deactivation of the catalytically active sites was more facile at higher temperatures. Temperature-programmed desorption (TPD) suggested that the formation of strongly bound carbonate species could be responsible for the deactivation process. Based on the TPD data. we propose that decomposition of carbonate species on the surface is the rate-determining step of CO oxidation. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：112 / 116

页数：5

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