Wafer level packaging compatible with millimeter-wave antenna

被引：14

作者：

Herth, E. ^{[1
]}

Seok, S. ^{[1
]}

Rolland, N. ^{[1
]}

Lasri, T. ^{[1
]}

机构：

[1] IEMN CNRS, UMR 8520, F-59650 Villeneuve Dascq, France

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2012年 / 173卷 / 01期

关键词：

Millimeter-wave antenna; Wafer level packaging; Coplanar waveguide fed aperture; MEMS; MMIC; RF; ENCAPSULATION;

D O I：

10.1016/j.sna.2011.09.040

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a technological process compatible process compatible with an above integrated circuit (IC) to achieve a millimeter wave antenna structure that is well-suited for wafer level packaging technology. The radiating patch is introduced inside of the air cavity of packaging. This structure consists of two dielectric substrates and benzocyclobutene (BCB) sealing rings at the wafer level. The wafer level packaging that holds the radiating patch is made of Pyrex, a low permittivity substrate. The millimeter-wave antenna using the micromachining technology is excited by a coplanar waveguide fed aperture (CPWFA). This feeding mechanism is designed and realized on GaAs, a high permittivity substrate. The electromagnetic energy of the CPWFA to the radiating patch is made through a coupling slot. The fabricated antenna of 6 mm x 6 mm, including the ground plane, exhibits a 10 dB bandwidth of 3 GHz from 50.5 GHz to 53.5 GHz. The design has been driven by the interest of collective encapsulation of MEMS and MMICs devices. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：238 / 243

页数：6

共 29 条

[1] Deep reactive ion etching of borosilicate glass using an anodically bonded silicon wafer as an etching mask [J].