Terahertz emission by diffusion of carriers and metal-mask dipole inhibition of radiation

被引：15

作者：

Barnes, M. E. ^{[1
]}

McBryde, D. ^{[1
]}

Daniell, G. J. ^{[1
]}

Whitworth, G. ^{[1
]}

Chung, A. L. ^{[1
]}

Quarterman, A. H. ^{[1
]}

Wilcox, K. G. ^{[1
]}

Brewer, A. ^{[2
]}

Beere, H. E. ^{[2
]}

Ritchie, D. A. ^{[2
]}

Apostolopoulos, V. ^{[1
]}

机构：

[1] Univ Southampton, Sch Phys & Astron, Southampton SO17 1BJ, Hants, England

[2] Univ Cambridge, Semicond Phys Grp, Cavendish Lab, Cambridge CB3 0HE, England

来源：

OPTICS EXPRESS | 2012年 / 20卷 / 08期

基金：

英国工程与自然科学研究理事会;

关键词：

Terahertz waves - Electric fields;

D O I：

10.1364/OE.20.008898

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Terahertz (THz) radiation can be generated by ultrafast photo-excitation of carriers in a semiconductor partly masked by a gold surface. A simulation of the effect taking into account the diffusion of carriers and the electric field shows that the total net current is approximately zero and cannot account for the THz radiation. Finite element modelling and analytic calculations indicate that the THz emission arises because the metal inhibits the radiation from part of the dipole population, thus creating an asymmetry and therefore a net current. Experimental investigations confirm the simulations and show that metal-mask dipole inhibition can be used to create THz emitters. (C) 2012 Optical Society of America

引用

页码：8898 / 8906

页数：9