Backward-Like Rectifying Behavior of La1.85Sr0.15CuO4/Nb:SrTiO3 Heterojunctions

被引：5
作者：
Chen, L. M. [1 ]
Xu, B. [2 ]
Chen, Z. P. [3 ]
Chen, P. [3 ]
Zhang, R. [1 ]
机构：
[1] Zhengzhou Inst Aeronaut Ind Management, Zhengzhou 450015, Henan, Peoples R China
[2] N China Inst Water Conservancy & Hydroelect Power, Zhengzhou 450011, Peoples R China
[3] Zhengzhou Univ Light Ind, Zhengzhou 450002, Peoples R China
来源：
JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM | 2012年 / 25卷 / 04期
基金：
美国国家科学基金会;
关键词：
Superconductor; Heterojunction; Rectifying properties; ELECTRON DEPOSITION TECHNIQUE; N-JUNCTION; SRTIO3; FILMS;
D O I：
10.1007/s10948-012-1406-7
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
La1.85Sr0.15CuO4+delta (LSCO)/Nb:SrTiO3 (NSTO) heterojunction, in which the LSCO film was excessively annealed in pure oxygen, was created by a combined technique including pulsed electron deposition, photolithography, and Ar-ion milling. Subsequent characterizations via measuring the current-voltage (I-V) relations revealed great sensitivity of the rectifying properties to the annealing, where a backward-like diode behavior was observed, which probably can be interpreted in connection with the band diagram of the heterojunction, and more insulating interface resulted from over-annealing effect on both LSCO and NSTO was presumably the primary cause. This study will provide an opportunity to understand more about the complicated physics underlying the rich properties in such heterojunctions.
引用
收藏
页码：983 / 988
页数：6
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