A microwave ceramic with general composition (1-x-y) BaTiO3 + x Cr2Ti3O9 + y Bi2O3 has been prepared by solid state synthesis at 1300-1400 degrees C. The phase composition, perovskite structural parameters and dielectric properties have been obtained by X-ray diffraction and dielectric measurements as a function of chemical composition and temperature. At low doping levels the formation of BaTiO3-based solid solution has been found. The precipitation of BaCrO3 has been detected at x = y = 2.0 molt A model of the incorporation of Cr3+ and Bi3+ ions into BaTiO3-based crystal lattice has been proposed. Diffused phase transition in the temperature range 100-140 degrees C have been revealed by dielectric measurements for different ceramic composition. As high dielectric constant as 7311 and as low dielectric loss as 0.02 have been found for the composition of 0.98BaTiO(3)-0.01Cr(2)Ti(3)O(9)-0.01Bi(2)O(3). (C) 2012 Elsevier Ltd. All rights reserved.
机构:
Inst. of Phys. Chem. of Materials, National Research Council, I-16149 Genoa, ItalyInst. of Phys. Chem. of Materials, National Research Council, I-16149 Genoa, Italy
Buscaglia, Maria Teresa
;
Buscaglia, Vincenzo
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Inst. of Phys. Chem. of Materials, National Research Council, I-16149 Genoa, ItalyInst. of Phys. Chem. of Materials, National Research Council, I-16149 Genoa, Italy
Buscaglia, Vincenzo
;
Viviani, Massimo
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Inst. of Phys. Chem. of Materials, National Research Council, I-16149 Genoa, ItalyInst. of Phys. Chem. of Materials, National Research Council, I-16149 Genoa, Italy
Viviani, Massimo
;
Nanni, Paolo
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Dept. of Chem. and Proc. Engineering, University of Genoa, I-16129 Genoa, ItalyInst. of Phys. Chem. of Materials, National Research Council, I-16149 Genoa, Italy
机构:
Shanghai Normal Univ, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R ChinaShanghai Normal Univ, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R China
Lin, Fangting
;
Shi, Wangzhou
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Shanghai Normal Univ, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R ChinaShanghai Normal Univ, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R China
机构:
Inst. of Phys. Chem. of Materials, National Research Council, I-16149 Genoa, ItalyInst. of Phys. Chem. of Materials, National Research Council, I-16149 Genoa, Italy
Buscaglia, Maria Teresa
;
Buscaglia, Vincenzo
论文数: 0引用数: 0
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机构:
Inst. of Phys. Chem. of Materials, National Research Council, I-16149 Genoa, ItalyInst. of Phys. Chem. of Materials, National Research Council, I-16149 Genoa, Italy
Buscaglia, Vincenzo
;
Viviani, Massimo
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h-index: 0
机构:
Inst. of Phys. Chem. of Materials, National Research Council, I-16149 Genoa, ItalyInst. of Phys. Chem. of Materials, National Research Council, I-16149 Genoa, Italy
Viviani, Massimo
;
Nanni, Paolo
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机构:
Dept. of Chem. and Proc. Engineering, University of Genoa, I-16129 Genoa, ItalyInst. of Phys. Chem. of Materials, National Research Council, I-16149 Genoa, Italy
机构:
Shanghai Normal Univ, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R ChinaShanghai Normal Univ, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R China
Lin, Fangting
;
Shi, Wangzhou
论文数: 0引用数: 0
h-index: 0
机构:
Shanghai Normal Univ, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R ChinaShanghai Normal Univ, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R China