Engineered core-shell Si1-xGex/Ge nanowires fabricated by focused ion beam and oxido-reduction

被引:9
作者
Aouassa, M. [1 ]
Ronda, A. [1 ]
Favre, L. [1 ]
Delobbe, A. [2 ]
Sudraud, P. [2 ]
Berbezier, I. [1 ]
机构
[1] Aix Marseille Univ, CNRS, IM2NP, F-13397 Marseille, France
[2] Orsay Phys, F-13710 Za St Charles, Fuveau, France
关键词
SILICON NANOWIRES; CONTROLLED GROWTH; THERMAL-OXIDATION; EPITAXIAL-GROWTH; GE NANOWIRES; SOLID GROWTH; LITHOGRAPHY; ARRAYS; SCALE;
D O I
10.1063/1.4813097
中图分类号
O59 [应用物理学];
学科分类号
摘要
We demonstrate that perfectly reproducible and homogeneous core-shell Si1-xGex/Ge nanowires can be produced by a two step nanofabrication process. The process makes use of a combination of Liquid Metal Alloy Ion Source-Focused Ion Beam (LMAIS-FIB) nanomilling and condensation. In a first step, we fabricate arrays of SiGe wires by LMAIS-FIB milling of fully relaxed Si1-xGex pseudo-substrates. The use of Ge2+ ions during this step avoids any metallic contamination of the nanowires. In a second step, we both reduce the diameter of the wires and form the core-shell configuration by oxido-reduction of the wires. Large arrays of core-shell nanowires with extended aspect ratio (length over diameter), small diameters and ultra-thin shell thickness are fabricated. Multilayer core-shell configurations with tunable arrangements could also be produced by repeated condensation cycles. (C) 2013 AIP Publishing LLC.
引用
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页数:5
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