Engineered core-shell Si1-xGex/Ge nanowires fabricated by focused ion beam and oxido-reduction

被引：9

作者：

Aouassa, M. ^{[1
]}

Ronda, A. ^{[1
]}

Favre, L. ^{[1
]}

Delobbe, A. ^{[2
]}

Sudraud, P. ^{[2
]}

Berbezier, I. ^{[1
]}

机构：

[1] Aix Marseille Univ, CNRS, IM2NP, F-13397 Marseille, France

[2] Orsay Phys, F-13710 Za St Charles, Fuveau, France

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 114卷 / 03期

关键词：

SILICON NANOWIRES; CONTROLLED GROWTH; THERMAL-OXIDATION; EPITAXIAL-GROWTH; GE NANOWIRES; SOLID GROWTH; LITHOGRAPHY; ARRAYS; SCALE;

D O I：

10.1063/1.4813097

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate that perfectly reproducible and homogeneous core-shell Si1-xGex/Ge nanowires can be produced by a two step nanofabrication process. The process makes use of a combination of Liquid Metal Alloy Ion Source-Focused Ion Beam (LMAIS-FIB) nanomilling and condensation. In a first step, we fabricate arrays of SiGe wires by LMAIS-FIB milling of fully relaxed Si1-xGex pseudo-substrates. The use of Ge2+ ions during this step avoids any metallic contamination of the nanowires. In a second step, we both reduce the diameter of the wires and form the core-shell configuration by oxido-reduction of the wires. Large arrays of core-shell nanowires with extended aspect ratio (length over diameter), small diameters and ultra-thin shell thickness are fabricated. Multilayer core-shell configurations with tunable arrangements could also be produced by repeated condensation cycles. (C) 2013 AIP Publishing LLC.

引用

页数：5

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