Emission properties of heterostructures with a (GaAsSb-InGaAs)/GaAs bilayer quantum well

被引:6
作者
Zvonkov, B. N. [1 ]
Nekorkin, S. M. [1 ]
Vikhrova, O. V. [1 ]
Dikareva, N. V. [1 ]
机构
[1] Nizhnii Novgorod State Univ, Phys Tech Res Inst, Nizhnii Novgorod 603950, Russia
基金
俄罗斯基础研究基金会;
关键词
GROWTH; PHOTOLUMINESCENCE; MOVPE;
D O I
10.1134/S1063782613090261
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The specific features of the emission characteristics of GaAs-based heterostructures with a GaAs1 - x Sb (x) -In (y) Ga1 - y As bilayer quantum well are studied. The heterostructures are grown by metal-organic chemical vapor deposition (MOCVD). With an analysis of previously reported data on the MOCVD growth process taken into account, the temperature range (560-580A degrees C), the relation between the fluxes emitted by the sources of Group-V and -III elements (a parts per thousand(2)1), and the order of layer growth for the production of the active region of a GaAs/InGaP laser heterostructure are determined experimentally. The active region is a GaAs0.75Sb0.25-In0.2Ga0.8As bilayer quantum well. For the structure, a 1075-nm electroluminescence signal attributed to indirect transitions between the valence band of the GaAs0.75Sb0.25 layer and the conduction band of the In0.2Ga0.8As layer is observed. An increase in the continuous-wave pump current yields a decrease in the 1075-nm emission intensity and initiates stable lasing at a wavelength of 1022 nm at a threshold current density of 1.4 kA cm(-2) at room temperature. Lasing occurs at transitions direct in coordinate space.
引用
收藏
页码:1219 / 1223
页数:5
相关论文
共 10 条
[1]   ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS0.5SB0.5 [J].
CHERNG, MJ ;
STRINGFELLOW, GG ;
COHEN, RM .
APPLIED PHYSICS LETTERS, 1984, 44 (07) :677-679
[2]   GaAsSb/InGaAs type-II quantum wells for long-wavelength lasers on GaAs substrates [J].
Klem, JF ;
Blum, O ;
Kurtz, SR ;
Fritz, J ;
Choquette, KD .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (03) :1605-1608
[3]   Photoreflectance investigations of oscillator strength and broadening of optical transitions for GaAsSb-GaInAs/GaAs bilayer quantum wells [J].
Kudrawiec, R ;
Sek, G ;
Ryczko, K ;
Misiewicz, J ;
Harmand, JC .
APPLIED PHYSICS LETTERS, 2004, 84 (18) :3453-3455
[4]  
Morozov S. V., 2012, P 16 INT S NAN NAN, V1, P316
[5]   Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31 μm (InyGa1-yAs/GaAs1-x Sbx)/ GaAs bilayer quantum wells [J].
Niu, ZC ;
Xu, XH ;
Ni, HQ ;
Xu, YQ ;
He, ZH ;
Han, Q ;
Wu, RH .
JOURNAL OF CRYSTAL GROWTH, 2005, 278 (1-4) :558-563
[6]  
Pesetto J.R., 1983, J CRYST GROWTH, V62, P1
[7]   REALIZATION AND MODELING OF A PSEUDOMORPHIC (GAAS1-XSBX-INYGA1-YAS)/GAAS BILAYER-QUANTUM WELL [J].
PETER, M ;
WINKLER, K ;
MAIER, M ;
HERRES, N ;
WAGNER, J ;
FEKETE, D ;
BACHEM, KH ;
RICHARDS, D .
APPLIED PHYSICS LETTERS, 1995, 67 (18) :2639-2641
[8]   Growth of strained GaAsSb layers on GaAs(001) by MOVPE [J].
Pristovsek, M ;
Zorn, M ;
Zeimer, U ;
Weyers, M .
JOURNAL OF CRYSTAL GROWTH, 2005, 276 (3-4) :347-353
[9]   Temperature effect on the growth of strained GaAs1-ySby/GaAs (y>0.4) quantum wells by MOVPE [J].
Su, Y. K. ;
Wan, C. T. ;
Chuang, R. W. ;
Huang, C. Y. ;
Chen, W. C. ;
Wang, Y. S. ;
Yu, H. C. .
JOURNAL OF CRYSTAL GROWTH, 2008, 310 (23) :4850-4853
[10]   Improving photoluminescence of highly strained 1.32 μm GaAsSb/GaAs multiple quantum wells grown on misorientation substrate [J].
Wan, Cheng-Tien ;
Su, Yan-Kuin ;
Chuang, Ricky W. ;
Huang, Chun-Yuan ;
Wang, Yi-Sin ;
Chen, Wei-Cheng ;
Yu, Hsin-Chieh .
JOURNAL OF CRYSTAL GROWTH, 2008, 310 (23) :4854-4857