Fe-substituted indium thiospinels: New intermediate band semiconductors with better absorption of solar energy

被引：27

作者：

Chen, Ping ^{[1
]}

Chen, Haijie ^{[1
]}

Qin, Mingsheng ^{[1
]}

Yang, Chongyin ^{[1
]}

Zhao, Wei ^{[1
]}

Liu, Yufeng ^{[1
]}

Zhang, Wenqing ^{[1
]}

Huang, Fuqiang ^{[1
,2
,3
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, CAS Key Lab Mat Energy Convers, Shanghai 200050, Peoples R China

[2] Peking Univ, Coll Chem & Mol Engn, Beijing Natl Lab Mol Sci, Beijing 100871, Peoples R China

[3] Peking Univ, Coll Chem & Mol Engn, State Key Lab Rare Earth Mat Chem & Applicat, Beijing 100871, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 113卷 / 21期

关键词：

ELECTRONIC-STRUCTURE; EFFICIENCY; IN2S3; CELLS; PHOTOVOLTAICS; POWDER; ALLOYS;

D O I：

10.1063/1.4808352

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The indium thiospinels In2S3 and MgIn2S4 are promising host for the intermediated band (IB) photovoltaic materials due to their ideal band gap value. Here, the optical properties and electronic structure of Fe-doped In2S3 and MgIn2S4 have been investigated. All the Fe-substituted semiconductors exhibit two additional absorption bands at about 0.7 and 1.25 eV, respectively. The results of first-principles calculations revealed that the Fe substituted at the octahedral In site would introduce a partially filled IB into the band gap. Thanks to the formation of IB, the Fe-substituted semiconductors have the ability to absorb the photons with energies below the band gap. With the wide-spectrum absorption of solar energy, these materials possess potential applications in photovoltaic domain. (C) 2013 AIP Publishing LLC.

引用

页数：8

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