Magnetic and magneto-dielectric properties of magneto-electric field effect capacitor using Cr2O3

We investigated the magnetic and dielectric properties of a metal (Pt)/insulator (Cr2O3)/magnetic floating gate (Fe)/tunnel layer (CeO2)/semiconductor (Si) capacitor. This capacitor shows capacitance-voltage (C-V) properties typical of a Si Metal-Insulator-Semiconductor (MIS) capacitor with hysteresis, which indicates that electrons have been injected into the Fe layer. The capacitor also shows ferromagnetic properties. The C-V curve has a hysteresis window with a clockwise trace. This hysteresis behavior was changed by the application of an external magnetic field. These results indicate that this MIS capacitor contains a ferromagnetic floating gate and a magneto-electric insulating layer in a single system. (C) 2008 The Ceramic Society of Japan. All rights reserved.