High Performance 1.3μm InAs Quantum Dot Lasers Epitaxially Grown on Silicon

被引：0
|
作者：
Liu, Alan Y. [1 ]
Zhang, Chong [2 ]
Snyder, Andrew [3 ]
Lubychev, Dimitri [3 ]
Fastenau, Joel M. [3 ]
Liu, Amy W. K. [3 ]
Gossard, Arthur C. [1 ,2 ]
Bowers, John E. [1 ,2 ]
机构：
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[3] IQE Inc, Bethlehem, PA 18015 USA
来源：
2014 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC) | 2014年
关键词：
SI;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate 1.3 mu m InAs quantum dot lasers on silicon by molecular beam epitaxial growth with low thresholds (16 mA), high output power (>50 mW), high T-0 (>200 K), and high temperature lasing (115 degrees C).
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页数：3
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