Fully Printed Zinc Oxide Electrolyte-Gated Transistors on Paper

被引:37
作者
Carvalho, Jose Tiago [1 ,2 ]
Dubceac, Viorel [1 ,2 ]
Grey, Paul [1 ,2 ]
Cunha, Ines [1 ,2 ]
Fortunato, Elvira [1 ,2 ]
Martins, Rodrigo [1 ,2 ]
Clausner, Andre [3 ]
Zschech, Ehrenfried [3 ]
Pereira, Luis [1 ,2 ]
机构
[1] Univ Nova Lisboa, CENIMAT I3N, Dept Ciencia Mat, Fac Ciencias & Tecnol, Campus Caparica, P-2829516 Caparica, Portugal
[2] CEMOP UNINOVA, Campus Caparica, P-2829516 Caparica, Portugal
[3] Fraunhofer Inst Ceram Technol & Syst IKTS, D-01109 Dresden, Germany
基金
欧盟地平线“2020”;
关键词
zinc oxide; nanoparticles; paper transistors; printed electronics; electrolyte-gated transistors; CELLULOSE;
D O I
10.3390/nano9020169
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Fully printed and flexible inorganic electrolyte gated transistors (EGTs) on paper with a channel layer based on an interconnected zinc oxide (ZnO) nanoparticle matrix are reported in this work. The required rheological properties and good layer formation after printing are obtained using an eco-friendly binder such as ethyl cellulose (EC) to disperse the ZnO nanoparticles. Fully printed devices on glass substrates using a composite solid polymer electrolyte as gate dielectric exhibit saturation mobility above 5 cm(2) V-1 s(-1) after annealing at 350 degrees C. Proper optimization of the nanoparticle content in the ink allows for the formation of a ZnO channel layer at a maximum annealing temperature of 150 degrees C, compatible with paper substrates. These devices show low operation voltages, with a subthreshold slope of 0.21 V dec(-1), a turn on voltage of 1.90 V, a saturation mobility of 0.07 cm 2 V-1 s(-1) and an I-on/I-off ratio of more than three orders of magnitude.
引用
收藏
页数:9
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