Characterization of Chemically Vapor Deposited Manganese Barrier Layers Using X-ray Absorption Fine Structure

被引：7

作者：

Ablett, James M. ^{[1
]}

Wilson, Christopher J. ^{[2
]}

Nguyen Mai Phuong ^{[3
]}

Koike, Junichi ^{[3
]}

Tokei, Zsolt ^{[2
]}

Sterbinsky, George E. ^{[4
]}

Woicik, Joseph C. ^{[4
]}

机构：

[1] Synchrotron Soleil, Lorme Merisiers, F-91192 Gif Sur Yvette, France

[2] IMEC, B-3001 Louvain, Belgium

[3] Tohoku Univ, Dept Mat Sci, Sendai, Miyagi 9808579, Japan

[4] NIST, Gaithersburg, MD 20899 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 05期

关键词：

D O I：

10.1143/JJAP.51.05EB01

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Chemical vapor deposition of manganese (CVD-Mn) on silicon dielectrics allows the growth of manganese silicate/oxide for use as an effective barrier material for Cu interconnects and is currently under intense evaluation for integration into future sub-22 nm technology. Employing fluorescence X-ray absorption fine structure (XAFS) measurements, we explore the chemical and structural makeup of the barrier layer formation on both SiO2 and low-k dielectrics. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

共 6 条

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