A resistless photolithography method for robust markers and electrodes

被引：8

作者：

Vijaykumar, T ^{[1
]}

John, NS ^{[1
]}

Kulkarni, GU ^{[1
]}

机构：

[1] Jawaharlal Nehru Ctr Adv Sci Res, Chem & Phys Mat Unit, Bangalore 560064, Karnataka, India

来源：

SOLID STATE SCIENCES | 2005年 / 7卷 / 12期

关键词：

photoresist; lithography; electrode fabrication; markers; DPN;

D O I：

10.1016/j.solidstatesciences.2005.08.018

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

We describe a method of resistless photolithography using laser for the fabrication of microscopic markers and electrodes. A single shot of laser (355 nm, 100 mJ) is used to induce local surface melting and thus transfer a pattern from the mask (TEM grid) on to the surface of silicon. With a silicon substrate pre-coated with a layer of phosphorus, the laser pulse selectively produces doped regions that are highly conducting. The electrodes and markers thus obtained are robust and can withstand harsh chemical treatments. The utility of the marker for dip-pen nanolithography is illustrated by performing gold colloid nanopatterning. (c) 2005 Elsevier SAS. All rights reserved.

引用

页码：1475 / 1478

页数：4

共 23 条

[1] Are single molecular wires conducting? [J].

Bumm, LA ;

Arnold, JJ ;

Cygan, MT ;

Dunbar, TD ;

Burgin, TP ;

Jones, L ;

Allara, DL ;

Tour, JM ;

Weiss, PS .

SCIENCE, 1996, 271 (5256) :1705-1707

[2] Ultrafast and direct imprint of nanostructures in silicon [J].

Chou, SY ;

Keimel, C ;

Gu, J .

NATURE, 2002, 417 (6891) :835-837

[3] Top-down meets bottom-up: Dip-pen nanolithography and DNA-directed assembly of nanoscale electrical circuits [J].

Chung, SW ;

Ginger, DS ;

Morales, MW ;

Zhang, ZF ;

Chandrasekhar, V ;

Ratner, MA ;

Mirkin, CA .

SMALL, 2005, 1 (01) :64-69

[4] Reproducible measurement of single-molecule conductivity [J].

Cui, XD ;

Primak, A ;

Zarate, X ;

Tomfohr, J ;

Sankey, OF ;

Moore, AL ;

Moore, TA ;

Gust, D ;

Harris, G ;

Lindsay, SM .

SCIENCE, 2001, 294 (5542) :571-574

[5] Conductance switching in single molecules through conformational changes [J].

Donhauser, ZJ ;

Mantooth, BA ;

Kelly, KF ;

Bumm, LA ;

Monnell, JD ;

Stapleton, JJ ;

Price, DW ;

Rawlett, AM ;

Allara, DL ;

Tour, JM ;

Weiss, PS .

SCIENCE, 2001, 292 (5525) :2303-2307

[6] 10-NM ELECTRON-BEAM LITHOGRAPHY AND SUB-50-NM OVERLAY USING A MODIFIED SCANNING ELECTRON-MICROSCOPE [J].

FISCHER, PB ;

CHOU, SY .

APPLIED PHYSICS LETTERS, 1993, 62 (23) :2989-2991

[7] The evolution of dip-pen nanolithography [J].

Ginger, DS ;

Zhang, H ;

Mirkin, CA .

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2004, 43 (01) :30-45

[8] Fabrication of dissimilar metal electrodes with nanometer interelectrode distance for molecular electronic device characterization [J].

Guillorn, MA ;

Carr, DW ;

Tiberio, RC ;

Greenbaum, E ;

Simpson, ML .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (03) :1177-1181

[9] FABRICATION AND AFM CHARACTERIZATION OF A COPLANAR TUNNEL JUNCTION WITH A LESS-THAN 30 NM INTERELECTRODE GAP [J].

ITOUA, S ;

JOACHIM, C ;

ROUSSET, B ;

FABRE, N .

NANOTECHNOLOGY, 1994, 5 (01) :19-25

[10] Electron transport through a metal-molecule-metal junction [J].

Kergueris, C ;

Bourgoin, JP ;

Palacin, S ;

Esteve, D ;

Urbina, C ;

Magoga, M ;

Joachim, C .

PHYSICAL REVIEW B, 1999, 59 (19) :12505-12513

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