Epitaxial growth of vertically aligned and branched single-crystalline tin-doped indium oxide nanowire arrays

被引：115
|
作者：
Wan, Q [1 ]
Wei, M [1 ]
Zhi, D [1 ]
MacManus-Driscoll, JL [1 ]
Blamire, MG [1 ]
机构：
[1] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England
来源：
ADVANCED MATERIALS | 2006年 / 18卷 / 02期
关键词：
D O I：
10.1002/adma.200501673
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Epitaxial growth of well-aligned tin-doped indium oxide (ITO) nanowire arrays on substrates of (100) yttrium-stabilized zirconia with vertical and inclined orientations is reported. Branched ITO nanowires are grown on (100) ITO nanowire backbones by a second step of Au-catalyzed vapor-liquid-solid growth. The Figure shows ITO nanowire branches grown parallel to one another on each side of an ITO nanowire backbone.
引用
收藏
页码：234 / +
页数：6
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