Tunable band gap and enhanced ferromagnetism by surface adsorption in monolayer Cr2Ge2Te6

被引:57
作者
Song, Changsheng [1 ,2 ]
Xiao, Wen [1 ,2 ]
Li, Lei [2 ]
Lu, Yi [3 ]
Jiang, Peiheng [2 ]
Li, Chaorong [1 ]
Chen, Aixi [1 ]
Zhong, Zhicheng [2 ,4 ]
机构
[1] Zhejiang Sci Tech Univ, Dept Phys, Hangzhou 310018, Zhejiang, Peoples R China
[2] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Magnet Mat & Devices, Zhejiang Prov Key Lab Magnet Mat & Applicat Techn, Ningbo 315201, Zhejiang, Peoples R China
[3] Heidelberg Univ, Inst Theoret Phys, D-69120 Heidelberg, Germany
[4] Univ Chinese Acad Sci, China Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
基金
中国国家自然科学基金; 国家重点研发计划; 中国博士后科学基金;
关键词
TOTAL-ENERGY CALCULATIONS; WAVE;
D O I
10.1103/PhysRevB.99.214435
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Two-dimensional (2D) van der Waals (vdW) materials have attracted significant attention for their promising applications in spintronic devices. Here, using first-principles calculations and renormalized spin-wave theory, we investigate the influence of surface adsorption (H and alkali metals) on the bandgap and ferromagnetism of monolayer Cr2Ge2Te6. We find that H-atom adsorption maintains the bandgap of Cr2Ge2Te6 around 0.95 eV but leads to a nearly indirect-to-direct band gap transition, while alkali-metal adsorption removes the bandgap and induces metallicity. More importantly, both H and alkali-metal adsorption surprisingly make the magnetic anisotropy energy four times larger than that of pristine Cr2Ge2Te6, leading to an increase of T-c by about 33%. Our findings of adsorption-controlled bandgap and magnetism in a 2D vdW magnet may open up opportunities for potential applications for new-generation magnetic memory storage, sensors, and spintronics.
引用
收藏
页数:5
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