Optimization of the thermal contact resistance within press pack IGBTs

被引：20
作者：
Deng, Erping [1 ,2 ]
Zhao, Zhibin [1 ]
Zhang, Peng [2 ]
Huang, Yongzhang [1 ]
Li, Jinyuan [2 ]
机构：
[1] North China Elect Power Univ, State Key Lab Alternate Elect Power Syst Renewabl, Beijing 102206, Peoples R China
[2] State Grid Global Energy Interconnect Res Inst, Beijing 102211, Peoples R China
来源：
MICROELECTRONICS RELIABILITY | 2017年 / 69卷
基金：
中国国家自然科学基金;
关键词：
Press pack IGBTs; Thermal contact resistance; Temperature; Clamping force; Nanosilver sintering technology; CONDUCTANCE;
D O I：
10.1016/j.microrel.2017.01.003
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The research of thermal contact resistance between multi-layers within press pack IGBTs (PP IGBTs) is significant for optimizing the PP IGBTs' thermal resistance to improve reliability, as the thermal contact resistance accounts for approximately 50% of the total thermal resistance of PP IGBTs. In this paper, thermal contact resistance between multi-layers is analysed via a finite element model (FEM) of a single fast recovery diode (FRD) submodule. Most importantly, the influence of temperature and clamping force on the thermal contact resistance is also discussed, and findings are verified by submodule thermal resistance experiments. Based on the FEM and experimental results, nanosilver sintering technology is proposed to fill the gap between the contact interfaces to reduce thermal contact resistance. The fabrication of a sintered single FRD submodule is also investigated in this paper, and the results of the sintered sample indicate that the thermal resistance is reduced by approximately 18.8% compared to a direct contact sample. (C) 2017 Elsevier Ltd. All rights reserved.
引用
收藏
页码：17 / 28
页数：12
相关论文
共 32 条
[1]  
Antonetti V.W., 1991, EXPERIMENTAVNUMERICA, V170, P35
[2]  
Antonetti V.W., 1984, ISHM TECHNICAL MONOG, V6984-003, P135
[3]  
Astm A, 2006, D547006 ASTM
[4]  
Bahrami M., 2003, P 36 AIAA THERM C JU
[5]  
Bahrami M, 2004, THERMAL RESISTANCES
[6]  
Bahrami M., 2003, ASME 2003 Heat Transfer Summer Conference, V3, P411
[7]  
Bahrami M., 2004, 42 AIAA AER SCI M EX
[8]  
Bejan A., 2003, Heat transfer handbook, V1
[9]  
Busca C, 2013, IEEE IND ELEC, P677, DOI 10.1109/IECON.2013.6699216
[10]   On the effect of power cycling stress on IGBT modules [J].
Cova, P ;
Fantini, F .
MICROELECTRONICS AND RELIABILITY, 1998, 38 (6-8) :1347-1352
1234