Synchrotron radiation-excited Si photoepitaxy using gas-source MBE

Epitaxial Si films are grown on Si substrates by synchrotron radiation-excited gas-source molecular beam epitaxy (MBE) using disilane. It is demonstrated that the epitaxial temperature is greatly lowered to 40 degrees C, where no other method can achieve epitaxial growth. Perfectly selective epitaxial growth between Si/SiO2 substrates can be achieved irrespective of growth time at temperatures above 700 degrees C. For low-temperature (80 degrees C) B doping using disilane/decaborane, it is confirmed that SR irradiation significantly enhances the doping efficiency and electrical activation rate.