Quaternary semiconductor derived and formation mechanism by non-vacuum route from solvothermal nanostructures for high-performance application

被引：27

作者：

Chen, Lin-Jer ^{[1
,2
]}

Chuang, Yu-Ju ^{[3
]}

机构：

[1] Natl Cheng Kung Univ, Inst Electroopt Sci & Engn, Tainan 701, Taiwan

[2] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 701, Taiwan

[3] Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 701, Taiwan

来源：

MATERIALS LETTERS | 2013年 / 91卷

关键词：

Crystal structure; Semiconductors; Nanocomposites; Solar energy materials; Thin films; NANOPARTICLES; SE;

D O I：

10.1016/j.matlet.2012.10.037

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Kesterites are important contenders among thin-film solar cells due to their direct band gap and higher absorption coefficient. I-2-II-IV-VI4 nanocrystal of Cu2ZnSnS4 is a chalcopyrite material with a near-optimum band gap of similar to 1.5 eV. Semiconductor Cu2ZnSnS4 nanorods were successfully prepared via a relatively simple and convenient solvothermal route. The device parameters for a single junction Cu2ZnSnS4 solar cell under AM1.5G are as follows: open circuit voltage of 319 mV, short-circuit current of 25.5 mA/cm(2), fill factor of 25, and a power conversion efficiency of 2.03%. Based on a series of comparative experiments under various reaction conditions, the probable formation mechanism of crystals Cu2ZnSnS4 nanorods is proposed. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：372 / 375

页数：4

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