DIELECTRIC AND IMPEDANCE STUDY OF OPTIMIZED CADMIUM SULPHIDE THIN FILM

被引：0

作者：

Ojha, K. S. ^{[1
]}

Srivastava, R. L. ^{[2
]}

机构：

[1] Inst Engn & Technol, Alwar 301030, India

[2] GIDA, Inst Technol & Management, Gorakhpur, Uttar Pradesh, India

来源：

CHALCOGENIDE LETTERS | 2013年 / 10卷 / 01期

关键词：

Cadmium sulphide; X-ray diffraction; Dielectric constant; Impedance spectroscopy; Band gap; OPTICAL-PROPERTIES; CDS; NANOPARTICLES; SIZE;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cadmium sulphide thin films are deposited by the spin coating technique onto well clean four alumina substrates. Out of four thin films, one film is untreated while the rest thin films are annealed at 100 degrees C, 200 degrees C and 300 degrees C. The hexagonal phase formation of CdS thin films are confirmed by X-ray diffraction studies and the structural parameters like lattice parameter and crystallite size are calculated. The transmittance and absorbance spectra are recorded in the range of 500-1100 nm. The direct band gaps of the films are calculated. The frequency-dependent dielectric constant of cadmium sulphide (CdS) is investigated in the temperature range of 303-398 K and in the frequency range of 1 KHz-1 MHz by impedance spectroscopy.

引用

页码：1 / 10

页数：10

共 14 条

[1] Light-assisted deposition of CdS thin films [J].