The effect of the traveling magnetic field (TMF) on the buoyancy-induced convection in the vertical Bridgman growth of semiconductors

被引:48
作者
Yesilyurt, S [1 ]
Motakef, S
Grugel, R
Mazuruk, K
机构
[1] Sabanci Univ, Istanbul, Turkey
[2] Cape Simulat, Natick, MA USA
[3] NASA, George C Marshall Space Flight Ctr, Huntsville, AL 35812 USA
基金
美国国家航空航天局;
关键词
material processing; traveling magnetic field; microgravity; vertical Bridgman technique;
D O I
10.1016/j.jcrysgro.2003.11.066
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
A traveling magnetic field (TMF) is created by means of applying out-of-phase currents to a number of coils. When applied to a conducting melt inside a cylindrical container, the TMF induces a Lorentz force that acts in the meridional directions (radial and axial), unlike the application of a rotating magnetic field (RMF), which creates a force in the azimuthal direction. In this work, we present a computational study of the TMF and its application to the Bridgman growth of the Ge. To quantify the effect of the TMF on the solid-melt interface, we use the maximum (magnitude-wise) tangential shear at the interface. (C) 2003 Elsevier B.V. All rights reserved.
引用
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页码:80 / 89
页数:10
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