Fabrication of InGaAs vertical-cavity surface-emitting lasers by molecular beam epitaxy on (411)A GaAs substrates and its room-temperature operation

被引：4
作者：
Hanamaki, Y
Takeuchi, T
Ogasawara, N
Shiraki, Y
机构：
[1] HEWLETT PACKARD LABS JAPAN, TAKATSU KU, KAWASAKI, KANAGAWA 213, JAPAN
[2] UNIV ELECTROCOMMUN, DEPT ELECT ENGN, CHOFU, TOKYO 182, JAPAN
来源：
JOURNAL OF CRYSTAL GROWTH | 1997年 / 175卷
关键词：
MBE; (411)A GaAs substrates; VCSEL; pulsed operation; room-temperature operation;
D O I：
10.1016/S0022-0248(96)00944-X
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We investigated the optimum growth conditions for fabrication of a high-reflective distributed Bragg reflector (DBR) with extremely flat heterointerfaces on (4 1 1)A GaAs substrates by molecular beam epitaxy (MBE). A high-reflective DBR consisting of AlAs/GaAs was successfully fabricated under the investigated optimum conditions of 580 degrees C with V/III (As-4/Ga) ratio of similar to 8. Using this high-reflective DBR, we succeeded for the first time in the optically pumped pulse operation of InGaAs vertical-cavity surface-emitting lasers (VCSELs) at room temperature on (4 1 1)A GaAs substrates with improved threshold characteristics compared to conventional (1 0 0) GaAs substrates.
引用
收藏
页码：359 / 364
页数：6
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