Tunable and sizable band gap in silicene by surface adsorption

被引：253

作者：

Quhe, Ruge ^{[1
,2
,3
]}

Fei, Ruixiang ^{[1
,2
]}

Liu, Qihang ^{[1
,2
]}

Zheng, Jiaxin ^{[1
,2
,3
]}

Li, Hong ^{[1
,2
]}

Xu, Chengyong ^{[1
,2
]}

Ni, Zeyuan ^{[1
,2
]}

Wang, Yangyang ^{[1
,2
]}

Yu, Dapeng ^{[1
,2
]}

Gao, Zhengxiang ^{[1
,2
]}

Lu, Jing ^{[1
,2
]}

机构：

[1] Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China

[2] Peking Univ, Dept Phys, Beijing 100871, Peoples R China

[3] Peking Univ, Acad Adv Interdisciplinary Studies, Beijing 100871, Peoples R China

来源：

SCIENTIFIC REPORTS | 2012年 / 2卷

关键词：

FIELD-EFFECT TRANSISTORS; BILAYER GRAPHENE; MOLECULES; SOLIDS;

D O I：

10.1038/srep00853

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Opening a sizable band gap without degrading its high carrier mobility is as vital for silicene as for graphene to its application as a high-performance field effect transistor (FET). Our density functional theory calculations predict that a band gap is opened in silicene by single-side adsorption of alkali atom as a result of sublattice or bond symmetry breaking. The band gap size is controllable by changing the adsorption coverage, with an impressive maximum band gap up to 0.50 eV. The ab initio quantum transport simulation of a bottom-gated FET based on a sodium-covered silicene reveals a transport gap, which is consistent with the band gap, and the resulting on/off current ratio is up to 10(8). Therefore, a way is paved for silicene as the channel of a high-performance FET.

引用

页数：6

共 46 条

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