Optimization of InAs/InGaAs quantum-dot microdisk lasers directly grown on silicon

被引：0

作者：

Wang, Wei ^{[1
]}

Wang, Jun ^{[1
]}

Cheng, Zhuo ^{[1
]}

Ma, Xing ^{[1
]}

Hu, Haiyang ^{[1
]}

Zhang, Ran ^{[1
]}

Yang, Zeyuan ^{[1
]}

Fan, Yibing ^{[1
]}

Yin, Haiying ^{[1
]}

Huang, Yongqing ^{[1
]}

Ren, Xiaomin ^{[1
]}

机构：

[1] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing, Peoples R China

来源：

2017 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE (ACP) | 2017年

关键词：

GAAS; SI;

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We demonstrate firstly an optimized InAs/InGaAs quantum-dot microdisk laser structure on silicon. The simulations indicate that Q-factor can exceed 10(6) at wavelength of 1.3 mu m with the diameter and the cladding layer thickness of 7 mu m and 1.75 mu m.

引用

页数：3

共 7 条

[1] PHOTOCONDUCTIVITY AND PHOTOLUMINESCENCE OF GAAS GROWN ON SI BY MOLECULAR-BEAM EPITAXY [J].