Low-loss GaInNAs saturable absorber mode locking a 1.3-μm solid-state laser

被引：61

作者：

Liverini, V ^{[1
]}

Schön, S ^{[1
]}

Grange, R ^{[1
]}

Haiml, M ^{[1
]}

Zeller, SC ^{[1
]}

Keller, U ^{[1
]}

机构：

[1] Swiss Fed Inst Technol, Inst Quantum Elect, Dept Phys, Zurich, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 20期

关键词：

D O I：

10.1063/1.1748841

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have demonstrated stable self-starting passive cw mode locking of a solid-state laser at about 1.3 mum using a GaInNAs semiconductor saturable absorber mirror (SESAM). GaInNAs SESAMs show negligible nonsaturable losses, low saturation fluences (11 muJ/cm(2)) and picosecond decay times which make them well-suited for self-starting and stable cw mode locking. Sub-10-ps pulses were produced with a Nd:YLF laser at 1314 nm. The incorporation of about 2% nitrogen into InGaAs redshifts the absorption edge above 1330 nm and reduces the strain in the saturable absorber grown on a GaAs/AlAs Bragg mirror. Final absorption edge adjustments have been made with thermal annealing which blueshifts the absorption edge. (C) 2004 American Institute of Physics.

引用

页码：4002 / 4004

页数：3

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