Structural properties of Ge nano-crystals embedded in SiO2 films from X-ray diffraction and Raman spectroscopy

被引：0

作者：

Role, AG ^{[1
]}

Vasilevskiy, MI ^{[1
]}

Conde, O ^{[1
]}

Gomes, MJM ^{[1
]}

机构：

[1] Univ Minho, Dept Fis, P-4709 Braga, Portugal

来源：

THIN FILMS EPITAXIAL GROWTH AND NANOSTRUCTURES | 1999年 / 79卷

关键词：

germanium; nanocrystals; r.f.-sputtering; X-ray diffraction; Raman spectroscopy;

D O I：

暂无

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

SiO2 films containing small particles of Ge were grown using the r.f.-magnetron sputtering technique. The films were studied by means of X-ray diffraction (XRD) and Raman spectroscopy. XRD studies revealed diamond structure of Ge particles in the films grown at temperatures higher than 500 degrees C. The dependence of the average size of Ge nanocrystals, determined by fitting the X-ray spectra (13-63 Angstrom), on the substrate temperature, r.f.-power and the fraction of semiconductor in the target was determined. Far higher-temperature grown films containing crystalline Ge particles, a pronounced peak due to confined optical phonons was observed in Raman spectra, while for those grown at lower temperature, there is just a broad band seen below 300 cm(-1). A theoretical model is applied to describe the contribution of optical phonons confined in small Ge spheres. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：58 / 62

页数：5

共 17 条

[1]

Cullity B.D., 1978, ELEMENTS XRAY DIFFRA, V2nd, P102

[2] CRYSTALLITE SIZE DETERMINATION IN MU-C-GE FILMS BY X-RAY-DIFFRACTION AND RAMAN LINE-PROFILE ANALYSIS [J].