Influence of duty ratio of pulsed bias on structure and properties of silicon-doped diamond-like carbon films by plasma deposition

被引：6

作者：

Nakazawa, Hideki ^{[1
]}

Kamata, Ryosuke ^{[1
]}

Miura, Soushi ^{[1
]}

Okuno, Saori ^{[1
]}

机构：

[1] Hirosaki Univ, Grad Sch Sci & Technol, Hirosaki, Aomori 0368561, Japan

来源：

THIN SOLID FILMS | 2013年 / 539卷

关键词：

Diamond-like carbon; Silicon; Pulsed substrate bias; Adhesion; Friction; Wear; TRIBOLOGICAL PROPERTIES; DLC FILMS; ION-IMPLANTATION; PERFORMANCE; STABILITY; METHANE; SP(3);

D O I：

10.1016/j.tsf.2013.05.089

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated the influence of the duty ratio of pulsed substrate bias on the structure and properties of Si-doped diamond-like carbon (Si-DLC) films deposited by radio frequency plasma-enhanced chemical vapor deposition using CH4, Ar, and monomethylsilane (CH3SiH3) as the Si source. The Si/(Si + C) ratios in the Si-DLC films deposited using pulsed bias were higher than that of the dc-biased Si-DLC film, and the Si fraction increased with decreasing pulse duty ratio. Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy analyses revealed that Si-C, Si-H-n, and C-H-n bonds in the Si-DLC films increased with decreasing duty ratio. The internal stress decreased as the duty ratio decreased, which is probably due to the increase in Si-C, Si-H-n, and C-H-n bonds in the films. The Si-DLC films deposited using pulsed bias had higher adhesion strength than the dc-biased Si-DLC film because of the further reduction of internal stress. At higher duty ratios, although the Si fractions of the pulse-biased Si-DLC films were higher than that of the dc-biased Si-DLC film, the wear rates of the former were less than that of the latter. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：134 / 138

页数：5

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