First Demonstration of Waveguide-Integrated Black Phosphorus Electro-Optic Modulator for Mid-Infrared Beyond 4 μm

被引：0

作者：

Huang, Li ^{[1
,2
]}

Dong, Bowei ^{[1
]}

Ma, Yiming ^{[1
]}

Lee, Chengkuo ^{[1
]}

Ang, Kah-Wee ^{[1
,2
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, 4 Engn Dr 3, Singapore 117583, Singapore

[2] Natl Univ Singapore, Ctr Adv 2D Mat, 6 Sci Dr 2, Singapore 117546, Singapore

来源：

2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2019年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate the first black phosphorus (BP) electro-optic modulator integrated with Si waveguide for the mid-infrared (MIR) spectrum from 3.85 to 4.1 mu m. Optical properties of BP were effectively modulated by a vertical electric field from a top gate through Burstein Moss and Franz-Keldysh effects. With a gate bias of -4 V, a modulation depth of similar to 5 dB was achieved with a small active footprint of merely 225 mu m(2). The modulation depth was observed to increase with decreasing light power. The results are promising for operations under weak-light condition with low-power consumption and compact footprint at room temperature. Our device lays a stepping stone towards realizing on-chip MIR systems for applications such as bio-sensing and environment monitoring.

引用

页数：4

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