Carbon-doped Sb2S3 thin films: Structural, optical and electrical properties

被引：67

作者：

Cardenas, Emma ^{[1
]}

Arato, A. ^{[1
]}

Perez-Tijerina, E. ^{[2
]}

Das Roy, T. K. ^{[1
]}

Castillo, G. Alan ^{[1
]}

Krishnan, B. ^{[1
]}

机构：

[1] Univ Autonoma Nuevo Leon, Fac Ingn Mecan & Elect, Nuevo Leon, Mexico

[2] Univ Autonoma Nuevo Leon, Fac Ciencias Fis & Matemat, Nuevo Leon, Mexico

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2009年 / 93卷 / 01期

关键词：

Sb2S3 thin films; Doping; Chemical bath deposition; CHEMICALLY DEPOSITED SB2S3; MOLECULAR-BEAM EPITAXY; GAAS; GROWTH; GAN; CELLS; TIO2; CCL4;

D O I：

10.1016/j.solmat.2008.02.026

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We report the modification of electrical properties of chemical-bath-deposited antimony sulphide (Sb2S3) thin films by thermal diffusion of carbon. Sb2S3 thin films were obtained from a chemical bath containing SbCl3 and Na2S2O3 salts at room temperature (27 degrees C) on glass substrates. A carbon thin film was deposited on Sb2S3 film by arc vacuum evaporation and the Sb2S3-C layer was subjected to heating at 300 degrees C in nitrogen atmosphere or in low vacuum for 30 min. The value of resistivity of Sb2S3 thin films was substantially reduced from 10(8) Omega cm for undoped condition to 10(2) Omega cm for doped thin films. The doped films, Sb2S3:C, retained the orthogonal stibnite structure and the optical band gap energy in comparison with that of undoped Sb2S3 thin films. By varying the carbon content (wt%) the electrical resistivity of Sb2S3 can be controlled in order to make it suitable for various opto-electronic applications. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：33 / 36

页数：4

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