Integrated Wideband Dipole Antenna for Pulse Beam-Formability by using 0.18-μm CMOS Technology

被引：0

作者：

Nguyen Ngoc Mai Khanh ^{[1
]}

Saski, Masahiro ^{[2
]}

Asada, Kunihiro ^{[1
,2
]}

机构：

[1] Univ Tokyo, Grad Sch Engn, Tokyo, Japan

[2] Univ Tokyo, VDEC, Tokyo, Japan

来源：

2010 ASIA-PACIFIC MICROWAVE CONFERENCE | 2010年

关键词：

On-chip antenna; dipole; wideband; CMOS; integrated circuit; VLSI; beam-forming;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A wideband on-chip dipole antenna for fully integrated pulse beam-forming purpose has been designed and fabricated. The antenna element in meandering shape is located in the top metal of a 1.8-V 5-metal-layer 0.18-mu m CMOS chip. The antenna's bandwidth from S-parameter measurement is 4.4 GHz with operating frequency range from 7.4 GHz to 11.8 GHz. A CMOS integrated pulse generator with possibility of pulse delay adjustment is included to the antenna's terminals. The minimum delay resolution is 2.3 ps in post-layout simulation. The 1.1-mV peak-peak (p-p) received pulse voltage at 10-GHz resonant frequency is achieved by using a 20-dB standard horn antenna with 38-mm distance to the chip.

引用

页码：1561 / 1564

页数：4