Optimized Power Modules for Silicon Carbide MOSFET

被引：41

作者：

Regnat, Guillaume ^{[1
,2
]}

Jeannin, Pierre-Olivier ^{[3
]}

Frey, David ^{[3
]}

Ewanchuk, Jeffrey ^{[4
]}

Mollov, Stefan V. ^{[4
]}

Ferrieux, Jean-Paul ^{[3
]}

机构：

[1] Univ Grenoble Alpes, French Natl Ctr Sci Res, CNRS, G2Elab, F-38000 Grenoble, France

[2] Mitsubishi Elect Res & Devlopment Ctr Europe, F-35000 Rennes, France

[3] Univ Grenoble Alpes, CNRS, G2Elab, F-38000 Grenoble, France

[4] Mitsubishi Elect Res & Dev Ctr Europe, F-35000 Rennes, France

来源：

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS | 2018年 / 54卷 / 02期

关键词：

Embedded die; power module; printed circuit board (PCB); SiC MOSFET; 3-D packaging; wide bandgap semiconductor;

D O I：

10.1109/TIA.2017.2784802

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A new 3-D power module dedicated to SiC MOSFET is presented. It is based on printed circuit board embedded die technology and is compared with a standard power module. After considering the characteristics that contribute to optimal switching performances from the packaging point of view, both modules are characterized in terms of switching behavior and electromagnetic interference emissions. The results show better performances of the 3-D embedded die module with stray inductances below 2 nH and two times less common mode noise.

引用

页码：1634 / 1644

页数：11

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