I-V characteristics of in-plane and out-of-plane strained edge-hydrogenated armchair graphene nanoribbons

被引:2
作者
Cartamil-Bueno, S. J. [1 ]
Rodriguez-Bolivar, S. [2 ]
机构
[1] Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands
[2] Univ Granada, Fac Sci, Dept Elect & Comp Technol, E-18071 Granada, Spain
关键词
ELECTRONIC-PROPERTIES; TRANSPORT-PROPERTIES; ELASTIC PROPERTIES; BAND-GAP; RIBBONS; ENERGY; FABRICATION; STATE; SIZE;
D O I
10.1063/1.4923225
中图分类号
O59 [应用物理学];
学科分类号
摘要
The effects of tensile strain on the current-voltage (I-V) characteristics of hydrogenated-edge armchair graphene nanoribbons are investigated by using DFT theory. The strain is introduced in two different ways related to the two types of systems studied in this work: in-plane strained systems (A) and out-of-plane strained systems due to bending (B). These two kinds of strain lead to make a distinction among three cases: in-plane strained systems with strained electrodes (A1) and with unstrained electrodes (A2), and out-of-plane homogeneously strained systems with unstrained, fixed electrodes (B). The systematic simulations to calculate the electronic transmission between two electrodes were focused on systems of 8 and 11 dimers in width. The results show that the differences between cases A2 and B are negligible, even though the strain mechanisms are different: in the plane case, the strain is uniaxial along its length; while in the bent case, the strain is caused by the arc deformation. Based on the study, a new type of nanoelectromechanical system solid state switching device is proposed. (C) 2015 AIP Publishing LLC.
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页数:8
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