Silicon-rich oxynitride hosts for 1.5 μm Er3+ emission fabricated by reactive and standard RF magnetron sputtering

被引：14

作者：

Cueff, S. ^{[1
]}

Labbe, C. ^{[1
]}

Khomenkova, L. ^{[1
]}

Jambois, O. ^{[2
]}

Pellegrino, P. ^{[2
]}

Garrido, B. ^{[2
]}

Frilay, C. ^{[1
]}

Rizk, R. ^{[1
]}

机构：

[1] Univ Caen Basse Normandie, ENSICAEN, CNRS, CIMAP CEA,UMR 6252, F-14050 Caen 4, France

[2] Univ Barcelona, MIND IN2UB, Dept Elect, Barcelona Cat 08028, Spain

来源：

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2012年 / 177卷 / 10期

关键词：

Erbium; Oxynitrides; Silicon; Sputtering; Photoluminescence; LIGHT-EMISSION; POPULATION-INVERSION; LOCAL-STRUCTURE; SI; PHOTOLUMINESCENCE; NANOCRYSTALS; FILMS; ELECTROLUMINESCENCE; TEMPERATURE; PHOTONICS;

D O I：

10.1016/j.mseb.2011.12.007

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This study compares the erbium emission from different Si-rich silicon oxynitrides matrices fabricated by magnetron sputtering. The Er-doped layers were grown by two different sputtering configurations: (i) standard co-sputtering of three confocal targets (Er2O3, Si3N4 and SiO2) under Ar plasma, and (ii) reactive co-sputtering under Ar + N-2 plasma of either three (Er2O3, pure Si and SiO2) or two targets (Er2O3 and pure Si). The last reactive configuration was found to offer the best Er3+ PL intensity at 1.5 mu m. This highest PL intensity was found comparable to the corresponding emission from Er-doped silicon-rich silicon oxide. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：725 / 728

页数：4

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