Electrical and optical characterization of Cd+ and P+ dually ion-implanted GaAs

被引:0
作者
Shen, HL
Fang, XH
Jiang, DS
Makita, Y
Kimura, S
Obara, A
Shima, T
Iida, T
Kotani, M
Kobayashi, N
机构
[1] Electrotechnical Laboratory, Tsukuba, Ibaraki 305
[2] Shanghai Institute of Metallurgy, Academia Sinica
[3] Nanjing Univ. of Chem. Engineering
[4] Semiconductor Institute, Academia Sinica
关键词
D O I
10.1016/S0168-583X(96)00969-X
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Electrical and optical properties in Cd+ singly and Cd+P+ dually implanted GaAs have been investigated. Samples were annealed by a furnace and characterized by the Van der Pauw method at room temperature and photoluminescence (PL) measurement at 2 K. It is found that a higher activation efficiency of the Cd impurities could be obtained by coimplantation of phosphorous ions. The optimum condition is that Cd+ ions and P+ ions are implanted with the same concentration for high dose implantation. In PL spectra, the intensity of the conduction band to Cd acceptor transition, (e,Cd), in the Cd+ implanted sample increases with increasing phosphorous concentration, which is consistent with the electrical results. PL spectra at the long wavelength region measured by a germanium detector show that P+ ion coimplantation does not produce any deep levels in GaAs. All the results indicate that phosphorous is an ideal species for coimplantation.
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收藏
页码:433 / 436
页数:4
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[41]   CAPLESS ANNEALING OF ION-IMPLANTED GAAS [J].
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[42]   ION-IMPLANTED SILICON PROFILES IN GAAS [J].
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[43]   INFRARED REFLECTION OF ION-IMPLANTED GAAS [J].
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[44]   EXTENDED DEFECTS OF ION-IMPLANTED GAAS [J].
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[45]   PROPERTIES OF ION-IMPLANTED GAAS DIODES [J].
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[49]   ELLIPSOMETRIC INVESTIGATION OF ION-IMPLANTED GAAS [J].
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[50]   CAPLESS ANNEALING OF ION-IMPLANTED GAAS [J].
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