A phase and amplitude control front end chip in SiGe for phased-array C-band radar applications

被引：0
|
作者：
Thiesies, H [1 ]
Berg, H [1 ]
机构：
[1] Ericsson Microwave Syst, Antenna & Microwave Technol, SE-43184 Molndal, Sweden
来源：
2005 IEEE MTT-S International Microwave Symposium, Vols 1-4 | 2005年
关键词：
amplifiers; BiCMOS integrated circuit; phase shifters; radar applications; silicon germanium;
D O I：
10.1109/MWSYM.2005.1516660
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes the first design run and measured results of a SiGe phase and amplitude controlling circuit for use in phased-array radar applications. The circuit was designed as a CaAs replacement study and results show that standard silicon germanium processes have sufficient performance to comply with radar requirements. MCM cost was the initial driver for this work and the possibility to integrate digital functions may prove to he the number one key factor to reduce this compared to CaAs based solutions.
引用
收藏
页码：561 / 564
页数：4
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