Contributions to Hanle lineshapes in Fe/GaAs nonlocal spin valve transport

被引：26

作者：

Awo-Affouda, C. ^{[1
]}

van 't Erve, O. M. J. ^{[1
]}

Kioseoglou, G. ^{[1
]}

Hanbicki, A. T. ^{[1
]}

Holub, M. ^{[1
]}

Li, C. H. ^{[1
]}

Jonker, B. T. ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 10期

关键词：

ferromagnetic materials; gallium arsenide; Hanle effect; III-V semiconductors; iron; magnetic domains; semiconductor-metal boundaries; spin polarised transport; spin valves; ELECTRICAL DETECTION; INJECTION; SEMICONDUCTORS; PRECESSION; BARRIER; FIELD;

D O I：

10.1063/1.3097012

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The transport Hanle effect is commonly used to determine spin lifetimes in spin-polarized transport structures. We show that the domain structure of ferromagnetic contacts used to inject and detect the spin current introduces asymmetries to the Hanle lineshape. In addition, the nuclear spin polarization can produce anomalous narrowing and broadening of the Hanle linewidth depending upon the orientation of the transport spin and the applied field. Neither effect is included in the analysis typically applied. We illustrate how these contributions can significantly impact the apparent spin lifetime extracted from the transport Hanle lineshape, and how they can be compensated for.

引用

页数：3

共 15 条

[1] ELECTRONIC ANALOG OF THE ELECTROOPTIC MODULATOR [J].