400-A (Pulsed) Vertical GaN p-n Diode With Breakdown Voltage of 700 V

被引：45

作者：

Kizilyalli, Isik C. ^{[1
]}

Edwards, Andrew P. ^{[1
]}

Nie, Hui ^{[1
]}

Bui-Quang, Phong ^{[1
]}

Disney, Donald ^{[2
]}

Bour, Dave ^{[1
]}

机构：

[1] Avogy Inc, San Jose, CA 95134 USA

[2] GlobalFoundries, Santa Clara, CA 95054 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 06期

关键词：

Gallium nitride; power-semiconductor devices; bulk GaN substrates; power diodes; scaling; ALGAN/GAN HEMTS;

D O I：

10.1109/LED.2014.2319214

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

There is a great interest in monolithic GaN semiconductor devices with high current capability for power electronics. In this letter, large area vertical GaN p-n diodes fabricated on bulk GaN substrates are discussed. Diodes with areas as large as 16 mm(2) with breakdown voltages exceeding 700 V and pulsed (100 mu s) currents approaching 400 A are reported. This is made possible for the first time in part due to the recent availability of improved quality bulk GaN substrates.

引用

页码：654 / 656

页数：3

共 18 条

[1]

Bolotnikov A., 2007, IEEE T ELECTRON DEV, V57, P1930

[2]

Disney D, 2013, PROC INT SYMP POWER, P59, DOI 10.1109/ISPSD.2013.6694455

[3] High breakdown voltage achieved on AlGaN/GaN HEMTs with integrated slant field plates [J].