Thickness dependent Raman study of epitaxial LaMnO3 thin films

被引：15

作者：

Chaturvedi, Aditi ^{[1
]}

Sathe, Vasant ^{[2
]}

机构：

[1] Indian Inst Technol, Dept Phys, Bombay 400076, Maharashtra, India

[2] UGC DAE Consortium Sci Res, Indore 452001, Madhya Pradesh, India

来源：

THIN SOLID FILMS | 2013年 / 548卷

关键词：

Thin films; Raman spectroscopy; Jahn-Teller distortion; MAGNETOTRANSPORT; SCATTERING; MANGANITE;

D O I：

10.1016/j.tsf.2013.08.099

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Epitaxial thin films of LaMnO3 of increasing thickness from 20 nm to 200 nm are deposited on LaAlO3 (001) substrates by pulsed laser deposition. The films are in-plane compressively strained and a 20 nm film is fully strained. The strain relaxation mechanism in these films is studied by X-ray diffraction and it is observed that the strain relaxes gradually as the thickness is increased. The low temperature Raman measurements on these films revealed that the Jahn-Teller distortion is responsible for the magnetic transition temperature in these films. The Jahn-Teller distortion is found to increase with decreasing film thickness that results in decreasing magnetic transition temperature. The films with thicknesses of 40 and 20 nm showed structural quenching due to strong strain imposed by the substrate. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：75 / 80

页数：6

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