Recombination of charge carriers in buried layers formed by high energy oxygen or carbon implantation into silicon

被引：0
|
作者：
Bogen, S [1 ]
Frey, L [1 ]
Herden, M [1 ]
Ryssel, H [1 ]
机构：
[1] FRAUNHOFER INST INTEGRIETE SCHALTUNGEN,BEREICH BAUELEMENTETECHNOL,D-91058 ERLANGEN,GERMANY
来源：
ION BEAM MODIFICATION OF MATERIALS | 1996年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：916 / 919
页数：4
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