Characterization of Nanocrystalline Permalloy Thin Films Obtained by Nitrogen MAD

被引:11
作者
Prieto, P. [1 ,2 ]
Carnarero, J. [3 ,4 ,5 ]
Marco, J. F. [6 ]
Jimenez, E. [3 ,4 ,5 ]
Benayas, J. M. [1 ,2 ]
Sanz, J. M. [1 ,2 ]
机构
[1] Univ Autonoma Madrid, Dept Fis Aplicada, E-28049 Madrid, Spain
[2] Univ Autonoma Madrid, Inst Ciencia Mat Nicolas Cabrera, E-28049 Madrid, Spain
[3] Campus Univ Autonoma Madrid, Dept Fis Mat Condensada, Madrid 28049, Spain
[4] Campus Univ Autonoma Madrid, Inst Ciencia Mat Nicolas Cabrera, Madrid 28049, Spain
[5] Campus Univ Autonoma Madrid, Inst Madrileno Estudios Avanzados Nanociencia IMD, Madrid 28049, Spain
[6] CSIC, Inst Quim Fis Rocasolano, E-28006 Madrid, Spain
关键词
Magnetization reversal; Mossbauer spectroscopy; soft magnetic films;
D O I
10.1109/TMAG.2008.2002483
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report on the structural changes and the corresponding magnetic effects induced by nitrogen ion beam assisted deposition (IBAD) of Fe(20)Ni(80) thin films. The films have been prepared by dual ion beam sputtering using a controlled mixture of Ar(+) and N(2)(+) ions in the ion beam used to assist the deposition. The structure, composition, and magnetic properties of the films have been studied by X-ray diffraction, Mossbauer spectroscopy, resonant Rutherford backscattering spectroscopy (RBS), and vectorial Kerr magnetometry. It has been observed that the presence of Ar(+) ions in the assistant beam induces the formation of a nanocrystalline structure. It has also been observed the expected dependence of the coercivity with the crystallite size in the ferromagnetic samples. However, the presence of small amount of paramagnetic gamma'-FeNi(3)N, as determined by Mossbauer spectroscopy, leads to a significant increase of the coercivity. Finally, it is also observed that the reduction of the average crystallite size as well as the presence of small amount of paramagnetic gamma-FeNi(3)N causes an important change in the magnetization reversal mechanism.
引用
收藏
页码:3913 / 3916
页数:4
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