Resonance Tunneling Transistors Based on C60 Encapsulated Double-Walled Carbon Nanotubes

被引：0

作者：

Li, Y. F. ^{[1
]}

Kaneko, T. ^{[1
]}

Hatakeyama, R. ^{[1
]}

机构：

[1] Tohoku Univ, Dept Elect Engn, Sendai, Miyagi 9808579, Japan

来源：

2007 7TH IEEE CONFERENCE ON NANOTECHNOLOGY, VOL 1-3 | 2007年

关键词：

carbon nanotubes; encapsulation; fullerene; negative differential resistance;

D O I：

10.1109/NANO.2007.4601165

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report electrical transport properties of resonance tunneling transistors fabricated using C-60-filled metallic double-walled carbon nanotubes. All the examined devices exhibit a strong negative differential resistance (NDR) behavior, and the high peak-to-valley current ratios more than 10(3) are observed at room temperature. More importantly, the observed NDR characteristics remain stable under forward and backward measurements. In addition, it is found that the applied gate voltages exercise a great influence on the peak voltage of NDR.

引用

页码：175 / 179

页数：5

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