Electrophoretic Deposition of Graphene Growth in a Nonconductive Substrate

被引：0

作者：

Chang, Yi-Tsung ^{[1
]}

Chang, Ching-Tsang ^{[1
]}

Huang, Wei-Chih ^{[1
]}

Horng, Tzyy-Sheng ^{[1
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Elect Engn, Kaohsiung 80424, Taiwan

来源：

2016 5TH INTERNATIONAL SYMPOSIUM ON NEXT-GENERATION ELECTRONICS (ISNE) | 2016年

关键词：

electrophoretic deposition; defect ratio; highly ordered pyrolytic graphite (HOPG); OXIDE; FILMS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In electrophoretic deposition, the quality of the deposition is closely related to both the electrolyte and electric field intensity. This study involved modifying the traditional electrophoresis setup and adjusting the variables of an experiment to deposit higher quality graphene a non-conductive silicon substrate. With a DC bias of 30 V and a 1 wt% Al-2 (SO4)(3) electrolytic solutions, the highest amount of graphene and the lowest number of graphene defects can be obtained. The defect ratio ID/IG is approximately 0.95.

引用

页数：2

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