Electrical and structural properties of AlN/GaN and AlGaN/GaN heterojunctions

被引：29

作者：

Polyakov, A. Y. ^{[1
]}

Smirnov, N. B. ^{[1
]}

Govorkov, A. V. ^{[1
]}

Markov, A. V. ^{[1
]}

Yugova, T. G. ^{[1
]}

Dabiran, A. M. ^{[2
]}

Wowchak, A. M. ^{[2
]}

Cui, B. ^{[2
]}

Osinsky, A. V. ^{[2
]}

Chow, P. P. ^{[2
]}

Pearton, S. J. ^{[3
]}

Scherbaichev, K. D. ^{[4
]}

Bublik, V. T. ^{[4
]}

机构：

[1] Inst Rare Met, Moscow 119017, Russia

[2] SVT Associates, Inc, Eden Prairie, MN 55344 USA

[3] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[4] Moscow Steel & Alloys Inst, Dept Semicond Mat Sci, Moscow 117936, Russia

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 104卷 / 05期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1063/1.2973463

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical and structural properties of AlN/GaN heterostructures grown by molecular beam epitaxy on sapphire are compared with those of AlGaN/GaN heterostructures. The structural characteristics as assessed by x-ray diffraction show little difference but the electron density in the two-dimensional electron gas is about twice higher for AlN/GaN structures with only slightly lower mobility than in AlGaN/GaN. By proper choice of the Fe doping in GaN(Fe) and the thickness of unintentionally doped GaN layers, the composite buffer of the structure can be Made semi-insulating. The current through the AlN/GaN structures is determined by tunneling through the AlN barrier and is much higher than that for AlGaN/GaN films due to the lower thickness of AlN compared to AlGaN. Increasing the thickness of AlN from 3 to 4 mn decreases the leakage current by about an order of magnitude. (C) 2008 American Institute of Physics.

引用

页数：6

共 17 条

[1]

BERMAN LS, 1981, CAPACITANCE SPECTROS

[2]

DABIRAN A, 2007, 7 INT C NITR S UNPUB, P48

[3]

FEWSTER PF, 2000, XRAY SCATTERING SEMI

[4] TRANSIENT PHOTOCONDUCTIVITY MEASUREMENTS IN SEMIINSULATING GAAS .1. AN ANALOG APPROACH [J].