Picosecond pulse amplification in AlGaAs flared amplifiers

被引:7
作者
Dagens, B
Balsamo, S
Montrosset, I
机构
[1] Politecnico di Torino, Dipartimento di Elettronica, Laboratorio di Optoelettronica
关键词
flared semiconductor optical amplifiers; picosecond and subpicosecond pulse amplification; ultrafast carrier dynamics;
D O I
10.1109/2944.605662
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Amplification of ultrashort pulses in a semiconductor flared amplifier is analyzed by using a two-dimensional (2-D) time-domain BPM (beam propagation method) model including the effects of gain saturation, finite-gain bandwidth, self-phase modulation, index dispersion, carrier heating, and gain relaxation between successive pulses induced by carrier diffusion and recombination, The paper includes a presentation of the model and of the numerical resolution method, detailed analysis and discussion of the spatio-temporal pulse distortions in the case of picosecond and subpicosecond pulses and an evaluation of the device performance, The performance of the flared amplifier is evaluated considering the temporal length, the time-bandwidth product, the far field, the output energy as a function of the input energy, the injected current, and the repetition rate, While subpicosecond pulse amplification leads to strong distortions and to very low total gain, the flared amplifier is well adapted to the amplification of picosecond pulses at low-repetition rates.
引用
收藏
页码:233 / 244
页数:12
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