Seed-less Copper Electrochemical Deposition on PVD resistive substrates as a Replacement/Enhancement for PVD Cu Seed Layers in HAR TSVs

被引：1

作者：

Armini, S. ^{[1
]}

Wilson, C. J. ^{[1
]}

Moussa, A. ^{[1
]}

Franquet, A. ^{[1
]}

Vanstreels, K. ^{[1
]}

Atanasova, T. ^{[1
]}

Radisic, A. ^{[1
]}

Civale, Y. ^{[1
]}

Redolfi, A. ^{[1
]}

Van Ammel, A. ^{[1
]}

El-Mekki, Z. ^{[1
]}

Bryce, G. ^{[1
]}

Ruythooren, W. ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

ELECTROCHEMICAL ENGINEERING FOR THE 21ST CENTURY (DEDICATED TO RICHARD C. ALKIRE) | 2010年 / 28卷 / 29期

关键词：

D O I：

10.1149/1.3502446

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The results of a wet alkaline seed deposition process directly on barrier layers or thin adhesion promoter films, such as CVD Co are presented. This solution has been successfully used for copper plating on blanket and patterned Though Silicon Via (TSVs) wafers covered with either silicon oxide/PVD Ta(N)/CVD Co or silicon oxide/PVD Ti/CVD Co stacks. Such direct plated films were used as seed layers for subsequent copper plating from a conventional sulfuric acid electroplating bath. The effect of the plated stack composition and thicknesses, processing waveform and applied current on the plating rate and morphology of the deposited copper has been investigated.

引用

页码：77 / 87

页数：11

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