Temperature dependence of the optical energy gap for the CdSxSe1-x quantum dots

被引：5

作者：

Kunets, VP ^{[1
]}

Kulish, NR ^{[1
]}

Kunets, VP ^{[1
]}

Lisitsa, MP ^{[1
]}

Malysh, NI ^{[1
]}

机构：

[1] Natl Acad Sci Ukraine, Inst Semicond, UA-03028 Kiev, Ukraine

来源：

SEMICONDUCTORS | 2002年 / 36卷 / 02期

关键词：

Magnetic Material; Electromagnetism; Borosilicate Glass; Glass Matrix; Bulk Crystal;

D O I：

10.1134/1.1453442

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A temperature dependence of the optical energy gap E-g(T) for the CdSxSe1-x quantum dots synthesized in a borosilicate glass matrix was investigated in the range of 4.2-500 K. It was demonstrated that this dependence reproduced the dependence E-g(T) for bulk crystals and is described by the Varshni formula for (r) over bar > a(B) over the entire temperature range. Here, (r) over bar is the average dot radius, and a(B) is the Bohr radius for the exciton in a bulk crystal. With the transition to quantum dots with (r) over bar < a(B), a decrease in the thermal coefficient of the band gap and a deviation from the Varshni dependence were observed in the temperature range of 4.2-100 K. The specific features observed are explainable by a decrease in the resulting macroscopic potential of the electron-phonon interaction and by modification of the vibration spectrum for dots as their volume decreases. (C) 2002 MAIK "Nauka / Interperiodica".

引用

页码：219 / 223

页数：5