Temperature dependence of the optical energy gap for the CdSxSe1-x quantum dots

被引:5
|
作者
Kunets, VP [1 ]
Kulish, NR [1 ]
Kunets, VP [1 ]
Lisitsa, MP [1 ]
Malysh, NI [1 ]
机构
[1] Natl Acad Sci Ukraine, Inst Semicond, UA-03028 Kiev, Ukraine
关键词
Magnetic Material; Electromagnetism; Borosilicate Glass; Glass Matrix; Bulk Crystal;
D O I
10.1134/1.1453442
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
A temperature dependence of the optical energy gap E-g(T) for the CdSxSe1-x quantum dots synthesized in a borosilicate glass matrix was investigated in the range of 4.2-500 K. It was demonstrated that this dependence reproduced the dependence E-g(T) for bulk crystals and is described by the Varshni formula for (r) over bar > a(B) over the entire temperature range. Here, (r) over bar is the average dot radius, and a(B) is the Bohr radius for the exciton in a bulk crystal. With the transition to quantum dots with (r) over bar < a(B), a decrease in the thermal coefficient of the band gap and a deviation from the Varshni dependence were observed in the temperature range of 4.2-100 K. The specific features observed are explainable by a decrease in the resulting macroscopic potential of the electron-phonon interaction and by modification of the vibration spectrum for dots as their volume decreases. (C) 2002 MAIK "Nauka / Interperiodica".
引用
收藏
页码:219 / 223
页数:5
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